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vishay siliconix dg4157 document number: 68800 s09-1725-rev. e, 07-sep-09 www.vishay.com 1 low voltage, 1- single spdt analog switch (1:2 multiplexer) with power down protection features ? direct cross of industry standard xxx4157 ? 1.65 v to 5.5 v operation voltage range ? guaranteed 1.4 v logic high input threshold at v cc = 5.5 v ? 117 mhz, - 3 db bandwidth ? low on-resistance ? power down protection ? compliant to rohs directive 2002/95/ec description the dg4157 is a high performance single pole double throw analog switch designed for 1.65 v to 5.5 v operation with single power rail. fabricated with high density cmos technology, the device achieves low on resistance as 1 at 4.5 v power supply and fast switching speed. the - 3 db bandwidth is typically 117 mhz. the dg4157 features break before make switch performance, and guarantees logic high control input threshold as low as 1.4 v over the range up to 5.5 v. it can handle both analog and digital signals and permits signals with amplitudes of up to v cc to be transmitted in either direction. power down protection circuit is built in to prevent abnormal current path through signal pins during power down condition. each output pin (a, b 0 , or b 1 ) can withstand greater than 8 kv (human body model). it is available in both sc-70-6 and miniqfn6 packages. the features make it an ideal part for the switching of audio, video, and data stream. functional block diagram and pin configuration * pb containing terminations are not rohs compliant, exemptions may apply. truth table logic input (s) function 0 b 0 connected to a 1 b 1 connected to a s a 1 2 3 6 top view b 1 gnd b 0 4 sc-70-6l 5 v+ pin 1 device marking: g0xx xx = date/lot traceability code g0xx ordering information temp. range package part number - 40 c to 85 c sc-70-6l DG4157DL-T1-E3 miniqfn-6l dg4157dn-t1-e4 miniqfn-6l top v ie w pin 1 de v ice marking: fx x = date/lot tracea b ility code 2 5 1 3 6 4 ab 0 v +g n d s b 1 fx a v aila b le p b -free rohs* compliant
www.vishay.com 2 document number: 68800 s09-1725-rev. e, 07-sep-09 vishay siliconix dg4157 notes: a. signals on a, or b or s exceeding v+ will be clamped by internal diodes. limit forwar d diode current to maximum current ratin gs. b. all leads welded or soldered to pc board. c. derate 3.1 mw/c above 70 c. d. derate 2.0 mw/c above 70 c. absolute maximum ratings parameter limit unit reference v+ to gnd - 0.3 to + 6 v s, a, b a - 0.3 to (v+ + 0.3) continuous current (any terminal) 200 ma peak current (pulsed at 1 ms, 10 % duty cycle) 400 storage temperature d suffix - 65 to 150 c power dissipation (packages) b sc-70-6l c 250 mw miniqfn-6l d 160 specifications parameter symbol test conditions unless otherwise specified v+ = 3.0 v, v in = 0 v or v+ e temp. a limits - 40 c to 85 c unit min. b typ. c max. b dc characteristics on resistance r on v+ = 2.7 v, b 0 or b 1 = 1.5 v, i o = 100 ma room 1.7 2.5 full 3 v+ = 4.5 v, b 0 or b 1 = 3.5 v, i o = 100 ma room 0.95 1.2 full 1.4 on resistance flatness r flatness v+ = 2.7 v, b 0 or b 1 = 0.75 v, 1.5 v, i o = 100 ma room 0.2 v+ = 4.5 v, b 0 or b 1 = 1 v, 3.5 v, i o = 100 ma room 0.14 0.3 full 0.4 on resistance match r on v+ = 2.7 v, b 0 or b 1 = 1.5 v, i o = 100 ma room 0.04 v+ = 4.5 v, b 0 or b 1 = 3.5 v, i o = 100 ma room 0.05 0.12 full 0.15 switch off leakage current i off v+ = 5.5 v, a = 1 v, 4.5 v b 0 or b 1 = 4.5 v, 1 v or floating room - 2 2 na full - 20 20 switch on leakage current i on room - 4 4 full - 40 40 digital control input, high voltage v inh v+ = 2.7 v to 5.5 v full 1.4 v input, low voltage v inl full 0.4 input current i inh , i inl v in = 0 or v+ full - 1 1 a power supply power supply range v+ full 1.65 5.5 v quiescent supply current i+ v+ = 5.5 v, v in = 0 v, 5.5 v room 0.05 0.5 a full 1
document number: 68800 s09-1725-rev. e, 07-sep-09 www.vishay.com 3 vishay siliconix dg4157 notes: a. room = 25 c, full = as determined by the operating suffix. b. the algebraic convention whereby the most negative value is a minimum and the most pos itive a maximum, is used in this data sheet. c. typical values are for design aid only, not guaranteed nor subject to production testing. d. guarantee by design, nor subjected to production test. e. v in = input voltage to perform proper function. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. parameter symbol test conditions unless otherwise specified v+ = 3.0 v, v in = 0 v or v+ e temp. a limits - 40 c to 85 c unit min. b typ. c max. b ac characteristics tu r n - o n t i m e d t on v+ = 2.7 v, b 0 or b 1 = 1.5 v, r l = 50 , c l = 35 pf room 40 55 ns full 60 v+ = 4.5 v, b 0 or b 1 = 1.5 v, r l = 50 , c l = 35 pf room 22 37 full 40 turn-off time d t off v+ = 2.7 v, b 0 or b 1 = 1.5 v, r l = 50 , c l = 35 pf room 12 27 full 30 v+ = 4.5 v, b 0 or b 1 = 1.5 v, r l = 50 , c l = 35 pf room 823 full 25 break-before-make time d t bbm v+ = 2.7 v, b 0 = b 1 = 1.5 v, r l = 50 , c l = 35 pf room 126 v+ = 4.5 v, b 0 = b 1 = 1.5 v, r l = 50 , c l = 35 pf 115 charge injection d q c l = 1 nf, r gen = 0 , v gen = 0 v room 50 pc off isolation d oirr r l = 50 , f = 1 mhz room - 58 db r l = 50 , f = 10 mhz - 31 crosstalk d x ta l k r l = 50 , c l = 5 pf, f = 1 mhz room - 63 r l = 50 , c l = 5 pf, f = 10 mhz - 36 bandwidth d bw r l = 50 room 117 mhz total harmonic distortion d thd r l = 600 , v in = 0.5 v, f = 20 to 20 khz room 0.02 % capacitance bx port off capacitance d c b(off) r l = 50 , c l = 5 pf, f = 1 mhz room 20 pf a port on capacitance d c a(on) 57 control pin capacitance d c in 5 specifications
www.vishay.com 4 document number: 68800 s09-1725-rev. e, 07-sep-09 vishay siliconix dg4157 typical characteristics t a = 25 c, unless otherwise noted r on vs. v a and supply voltage supply current vs. temperature leakage vs. analog voltage v a - analog v oltage ( v ) r o n - on resistance ( ) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 0.5 1.0 1.5 2.0 2.5 i b = 5 ma v + = 1.65 v v + = 2.35 v , i b = 10 ma v + = 2.0 v v + = 1. 8 v 0.01 0.1 1 10 - 40 - 20 0 20 40 60 8 0 temperat u re (c) i+ - s u pply c u rrent (na) v + = 5.5 v - 700 - 500 - 300 - 100 100 300 500 700 012345 v a - analog v oltage ( v ) leakage c u rrent (pa) v + = 5.5 v i a(off) i b0(off) i a(o n ) r on vs. v a and supply voltage r on vs. v d and temperature leakage current vs. temperature v a - analog v oltage ( v ) r o n - on resistance ( ) 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 2.2 2.4 2.6 2. 8 3.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 i b = 100 ma v + = 3.0 v v + = 2.7 v v + = 3.3 v v + = 3.6 v v + = 4.5 v v + = 5.5 v v a - analog v oltage ( v ) r o n - on resistance ( ) 0 0.5 1.0 1.5 2.0 2.5 0 0.5 1.0 1.5 2.0 2.5 3.0 + 8 5 c v + = 2.7 v + 25 c - 40 c 1 10 100 1000 10 000 - 40 - 20 0 20 40 60 8 0 100 temperat u re (c) leakage c u rrent (pa) v + = 5.5 v i a(off) i a(o n ) i b0(off)
document number: 68800 s09-1725-rev. e, 07-sep-09 www.vishay.com 5 vishay siliconix dg4157 typical characteristics t a = 25 c, unless otherwise noted charge injection vs. analog voltage switching time vs. temperature - 8 0 - 60 - 40 - 20 0 20 40 60 8 0 100 0123456 analog v oltage ( v ) q - charge injection (pc) c l = 1nf drain v + = + 2.7 v v + = + 1. 8 v v + = + 3.6 v v + = + 3 v v + = + 5.5 v v + = + 4.5 v 0 5 10 15 20 25 30 35 40 45 50 - 40 - 20 0 20 40 60 8 0 temperat u re (c) t o n , t off - s w itching time (ns) t off v + = 2.7 v t off v + = 4.5 v t o n v + = 2.7 v t o n v + = 4.5 v insertion loss vs. frequency switching threshold vs. supply voltage - 16 - 14 - 12 - 10 - 8 - 6 - 4 - 2 0 100k 1m 10m 100m 1g freq u ency (hz) loss (db) v + = 3 v r l = 50 v + - s u pply v oltage ( v ) v t - s w itching threshold ( v ) 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v ih v il off-isolation and crosstalk vs. frequency 100k 1m 10m 100m 1g freq u ency (hz) - 90 - 8 0 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 oirr, x talk (db) v + = 3 v r l = 50 oirr x talk
www.vishay.com 6 document number: 68800 s09-1725-rev. e, 07-sep-09 vishay siliconix dg4157 test circuits figure 1. switching time switch input c l (includes fixture and stray capacitance) v+ s b 1 or b 0 c l 35 pf a logic input r l 50 v out gnd v+ 50 % 0 v v inl logic input switch output t on t off 0 v switch output v out =v a r l r l +r on v inh 0.9 x v out t r < 5 ns t f < 5 ns figure 2. break-before-make interval c l (includes fixture and stray capacitance) b 0 b 1 b 1 b 0 v inl v inh 0 v logic input switch output v o b 0 = b 1 t r < 5 ns t f < 5 ns 90 % t d t d s a v+ gnd v+ c l 35 pf v o r l 50 figure 3. charge injection off on on s v out v out q = v out x c l c l a r gen v out b 0 or b 1 s v gen gnd v+ v+ s depends on switch configuration: input polarity determined by sense of switch. +
document number: 68800 s09-1725-rev. e, 07-sep-09 www.vishay.com 7 vishay siliconix dg4157 test circuits vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68800 . figure 4. off-isolation s gnd b 0 or b 1 0 v, v+ 10 nf a off isolation = 20 log b 0 / b 1 v a r l analyzer v+ v+ figure 5. channel off/on capacitance b 0 or b 1 f = 1 mhz s a gnd 0 v, v+ meter impedance analyzer 10 nf v+ v+
l c e e 1 e d e 1 a 2 a a 1 1 -a- b -b- 23 654 package information vishay siliconix document number: 71154 06-jul-01 www.vishay.com 1

dim min nom max min nom max a 0.90 ? 1.10 0.035 ? 0.043 a 1 ? ? 0.10 ? ? 0.004 a 2 0.80 ? 1.00 0.031 ? 0.039 b 0.15 ? 0.30 0.006 ? 0.012 c 0.10 ? 0.25 0.004 ? 0.010 d 1.80 2.00 2.20 0.071 0.079 0.087 e 1.80 2.10 2.40 0.071 0.083 0.094 e 1 1.15 1.25 1.35 0.045 0.049 0.053 e 0.65bsc 0.026bsc e 1 1.20 1.30 1.40 0.047 0.051 0.055 l 0.10 0.20 0.30 0.004 0.008 0.012 7 nom 7 nom ecn: s-03946?rev. b, 09-jul-01 dwg: 5550
vishay siliconix package information document number: 74497 12-feb-07 www.vishay.com 1 mini qfn-6l case outline dim millimeters inches min. nam. max. min. nam. max. a 0.50 0.55 0.60 0.0197 0.0217 0.0236 a1 0.00 - 0.05 0.000 - 0.002 b 0.15 0.20 0.25 0.006 0.008 0.010 c 0.15 ref 0.006 ref d 1.15 1.20 1.25 0.045 0.047 0.049 e 0.95 1.00 1.05 0.037 0.039 0.041 e 0.40 bsc 0.016 bsc l 0.30 0.35 0.40 0.012 0.014 0.016 l1 0.40 0.45 0.50 0.016 0.018 0.020 ecn t-07039-rev. a, 12-feb-07 dwg: 5958
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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